| PART |
Description |
Maker |
| M36L0T7050 M36L0T7050B0 M36L0T7050T0 M36L0T7050T0Z |
128Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32Mbit (2M x16) PSRAM
From old datasheet system
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36W0T7040T0 M36W0T7040T0ZAQT |
128Mbit (Multiple Bank, 8Mb x 16, Burst) Flash Memory 16Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的（x16）的闪存16M内存（x16）的SRAM接口的FCRAM
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71
ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc.
Spansion, Inc.
|
| M36WT8B10ZA6T M36WT8B70ZA6T M36WT864T70ZA6T M36WT8 |
HEATSHRINK BLACK 4IN X 50FT 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product 64兆位4Mb的x16插槽，多银行，突发闪存和8兆位的SRAM12k x16，内存产品多
|
STMicroelectronics N.V.
意法半导
|
| HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM
x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
| MB84VD23280EA MB84VD23280EA-90 MB84VD23280EA-90-PB |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM 64M号（x8/x16）闪
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MB84VD2328 MB84VD23280FA-70PBS MB84VD23280FA MB84V |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
